RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KHX1600C9D3/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
比较
Kingston KHX1600C9D3/4G 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
总分
Kingston KHX1600C9D3/4G 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston KHX1600C9D3/4G 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
36
左右 -89% 更低的延时
更快的读取速度,GB/s
19.5
14.5
测试中的平均数值
更快的写入速度,GB/s
15.8
9.7
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston KHX1600C9D3/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
19
读取速度,GB/s
14.5
19.5
写入速度,GB/s
9.7
15.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2465
3435
Kingston KHX1600C9D3/4G 4GB RAM的比较
Kingston 99U5403-050.A00LF 4GB
Kingston KHX1600C10D3/8G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 9905622-058.A00G 8GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Corsair CM2X1024-6400C4 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Kingston K531R8-MIN 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Team Group Inc. Vulcan-1600 4GB
Avexir Technologies Corporation T 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3000C16-8GTRS 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Samsung M393B2G70BH0-YK0 16GB
Kingston ACR32D4S2S8ME-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3000C16-16GISB 16GB
报告一个错误
×
Bug description
Source link