Kingston KHX1600C9D3/4G 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 36

左右 -89% 更低的延时
更快的读取速度，GB/s

19.5 14.5

测试中的平均数值
更快的写入速度，GB/s

15.8 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 19
读取速度，GB/s

14.5 19.5
写入速度，GB/s

9.7 15.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F6451U64F9333G 4GB

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Crucial Technology BLS4G4D240FSC.M8FADG 4GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB