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Kingston KHX1600C9D3/8G 8GB
Samsung M471A1K43DB1-CWE 8GB

Kingston KHX1600C9D3/8G 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异 规格 评论

差异

Kingston KHX1600C9D3/8G 8GB 需要考虑的原因
Kingston KHX1600C9D3/8G 8GB
报告一个错误
Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 38
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9D3/8G 8GB
Samsung M471A1K43DB1-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 33
  • 读取速度，GB/s
    14.7 left arrow 16.1
  • 写入速度，GB/s
    9.1 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2496 left arrow 2987

Kingston KHX1600C9D3/8G 8GB RAM的比较

Kingston KHX16LC9/8GX 8GB
Kingston 99U5474-028.A00LF 4GB

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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