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Kingston KHX1600C9D3/8G 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
比较
Kingston KHX1600C9D3/8G 8GB vs Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
总分
Kingston KHX1600C9D3/8G 8GB
总分
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston KHX1600C9D3/8G 8GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
38
左右 -46% 更低的延时
更快的读取速度,GB/s
18.6
14.7
测试中的平均数值
更快的写入速度,GB/s
16.2
9.1
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston KHX1600C9D3/8G 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
26
读取速度,GB/s
14.7
18.6
写入速度,GB/s
9.1
16.2
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2496
3756
Kingston KHX1600C9D3/8G 8GB RAM的比较
Kingston KHX16LC9/8GX 8GB
Kingston 99U5474-028.A00LF 4GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB RAM的比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Team Group Inc. UD5-6400 16GB
Corsair CM4X16GE2666C18S4 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS824A.M8FH 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M391A1G43EB1-CRC 8GB
报告一个错误
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Bug description
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