Kingston KHX1600C9S3L/4G 4GB vs Hyundai Inc GR26C16S8K2HU416 8GB

总分

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分

Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

差异规格评论

差异

Kingston KHX1600C9S3L/4G 4GB

需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB

报告一个错误

Hyundai Inc GR26C16S8K2HU416 8GB

需要考虑的原因
Hyundai Inc GR26C16S8K2HU416 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 40

左右 -82% 更低的延时
更快的读取速度，GB/s

17.4 13.1

测试中的平均数值
更快的写入速度，GB/s

13.6 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/4G 4GB

Hyundai Inc GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 22
读取速度，GB/s

13.1 17.4
写入速度，GB/s

8.5 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2148 3182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Netac Technology Co Ltd E40832A 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Kingston MSI24D4U7D8MH-16 16GB

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Kingston KHX1600C9S3L/4G 4GB

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Hyundai Inc GR26C16S8K2HU416 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology BLS8G4D26BFSE.16FE 8GB

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Micron Technology 18ASF2G72PDZ-2G3A1 16GB

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Corsair CMD16GX4M2A2400C14 8GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

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A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

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Corsair CMD32GX4M4B3000C15 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB