Kingston KHX1600C9S3L/4G 4GB vs Kingston 9905712-016.A00G 16GB

总分

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分

Kingston 9905712-016.A00G 16GB

Kingston 9905712-016.A00G 16GB

差异规格评论

差异

Kingston KHX1600C9S3L/4G 4GB

需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB

报告一个错误

Kingston 9905712-016.A00G 16GB

需要考虑的原因
Kingston 9905712-016.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 -67% 更低的延时
更快的读取速度，GB/s

16.8 13.1

测试中的平均数值
更快的写入速度，GB/s

12.4 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/4G 4GB

Kingston 9905712-016.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 24
读取速度，GB/s

13.1 16.8
写入速度，GB/s

8.5 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2148 2991

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5270CH0-CH9 4GB

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Samsung M378A1K43BB2-CTD 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Golden Empire CL16-18-18 D4-2666 8GB

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Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Kingston 9905712-016.A00G 16GB

Kingston 9905712-016.A00G 16GB

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Crucial Technology BLS4G4D240FSA.M8FADM 4GB

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Samsung M378B5773DH0-CH9 2GB

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston HP37D4U1S8ME-8X 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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G Skill Intl F4-4400C16-8GVK 8GB