Kingston KHX1600C9S3L/4G 4GB vs Panram International Corporation R748G2133U2S 8GB

总分

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分

Panram International Corporation R748G2133U2S 8GB

Panram International Corporation R748G2133U2S 8GB

差异规格评论

差异

Kingston KHX1600C9S3L/4G 4GB

需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB

报告一个错误

更快的写入速度，GB/s

8.5 6.2

测试中的平均数值

Panram International Corporation R748G2133U2S 8GB

需要考虑的原因
Panram International Corporation R748G2133U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 -67% 更低的延时
更快的读取速度，GB/s

13.4 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/4G 4GB

Panram International Corporation R748G2133U2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 24
读取速度，GB/s

13.1 13.4
写入速度，GB/s

8.5 6.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2148 2078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D240FSC.16FBD 16GB

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Kingston 99U5474-037.A00LF 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

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Samsung M395T2863QZ4-CF76 1GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Panram International Corporation W4U2133PS-8G 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

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G Skill Intl F4-3333C16-16GVR 16GB