Kingston KHX1600C9S3L/4G 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异规格评论

差异

Kingston KHX1600C9S3L/4G 4GB

需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 40

左右 -122% 更低的延时
更快的读取速度，GB/s

20.4 13.1

测试中的平均数值
更快的写入速度，GB/s

17.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/4G 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 18
读取速度，GB/s

13.1 20.4
写入速度，GB/s

8.5 17.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2148 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 99U5702-095.A00G 8GB

Kingston 99U5702-095.A00G 8GB

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Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

Kingston KHX1600C9S3L/4G 4GB

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Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB