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Nanya Technology M2N1G64TUH8D5F-AC 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.3
    测试中的平均数值
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    59 left arrow 92
    左右 -56% 更低的延时
  • 更快的写入速度，GB/s
    7.6 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 59
  • 读取速度，GB/s
    2,105.4 left arrow 17.3
  • 写入速度，GB/s
    1,266.1 left arrow 7.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 1954

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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