Kingston KHX1600C9S3L/8G 8GB vs G Skill Intl F4-3600C16-8GTZN 8GB

总分

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

总分

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

差异规格评论

差异

Kingston KHX1600C9S3L/8G 8GB

需要考虑的原因
Kingston KHX1600C9S3L/8G 8GB

报告一个错误

G Skill Intl F4-3600C16-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 41

左右 -71% 更低的延时
更快的读取速度，GB/s

21 13.4

测试中的平均数值
更快的写入速度，GB/s

17.8 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/8G 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 24
读取速度，GB/s

13.4 21.0
写入速度，GB/s

9.2 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2348 4006

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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G Skill Intl F4-3600C16-8GTZNC 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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Corsair CMK16GX4M2D3600C16 8GB

Corsair CMK16GX4M2D3600C16 8GB

Corsair CMY8GX3M2A2666C10 4GB

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Kingston 9965662-015.A00G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston 99U5734-036.A00G 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMSX32GX4M1A2666C18 32GB

Corsair CMSX32GX4M1A2666C18 32GB