Samsung M3 78T5663RZ3-CE6 2GB vs Samsung M386A4G40DM1-CRC 32GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 10.3

测试中的平均数值

Samsung M386A4G40DM1-CRC 32GB

需要考虑的原因
Samsung M386A4G40DM1-CRC 32GB

报告一个错误

低于PassMark测试中的延时，ns

35 60

左右 -71% 更低的延时
更快的写入速度，GB/s

6.0 2,168.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M386A4G40DM1-CRC 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 35
读取速度，GB/s

4,595.2 10.3
写入速度，GB/s

2,168.2 6.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 1851

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-061.A00LF 2GB

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G Skill Intl F4-4000C15-8GTZR 8GB

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Corsair CM2X1024-8500C5D 1GB

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Corsair CMSX64GX4M4A2666C18 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Kingston HP669238-071-HYC 4GB

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G Skill Intl F4-2800C15-4GVR 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Patriot Memory (PDP Systems) PSD48G266681 8GB

Patriot Memory (PDP Systems) PSD48G266681 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK32GX4M2D3600C18 16GB

Corsair CMK32GX4M2D3600C18 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMK32GX4M4K4000C19 8GB

Corsair CMK32GX4M4K4000C19 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB