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Kingston KHX1600C9S3L/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
比较
Kingston KHX1600C9S3L/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
总分
Kingston KHX1600C9S3L/8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston KHX1600C9S3L/8G 8GB
报告一个错误
更快的读取速度,GB/s
13.4
11.3
测试中的平均数值
更快的写入速度,GB/s
9.2
7.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
41
左右 -28% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston KHX1600C9S3L/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
32
读取速度,GB/s
13.4
11.3
写入速度,GB/s
9.2
7.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2348
2292
Kingston KHX1600C9S3L/8G 8GB RAM的比较
Kingston KHX2133C13D4/8GX 8GB
Kingston X3XCFP-HYA 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB RAM的比较
Crucial Technology CT51264BD160B.C16F 4GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2400C16-8GFX 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905712-034.A00G 16GB
报告一个错误
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Bug description
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