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Kingston KHX16LC9/8GX 8GB
Micron Technology 4ATF51264HZ-2G3B2 4GB

Kingston KHX16LC9/8GX 8GB vs Micron Technology 4ATF51264HZ-2G3B2 4GB

总分
star star star star star
Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

差异 规格 评论

差异

Kingston KHX16LC9/8GX 8GB 需要考虑的原因
Kingston KHX16LC9/8GX 8GB
报告一个错误
Micron Technology 4ATF51264HZ-2G3B2 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 38
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KHX16LC9/8GX 8GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 31
  • 读取速度，GB/s
    14.3 left arrow 15.4
  • 写入速度，GB/s
    9.4 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2511 left arrow 2447

Kingston KHX16LC9/8GX 8GB RAM的比较

Kingston KHX1600C9D3/8G 8GB
Samsung M471A1G43DB0-0-B 8GB

Micron Technology 4ATF51264HZ-2G3B2 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 99P5474-055.A00LF 4GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
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Samsung M393B2K70DM0-CF8 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
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Kingston 99U5474-022.A00LF 2GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
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内存RAM
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内存RAM
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Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4133C19-8GTZR 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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G Skill Intl F4-4000C17-8GVKB 8GB
内存RAM