Kingston KHX1866C10D3/8GX 8GB vs Golden Empire CL18-20-20 D4-3600 8GB

总分

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

差异规格评论

差异

Kingston KHX1866C10D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB

报告一个错误

Golden Empire CL18-20-20 D4-3600 8GB

需要考虑的原因
Golden Empire CL18-20-20 D4-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

17.7 14.4

测试中的平均数值
更快的写入速度，GB/s

15.8 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/8GX 8GB

Golden Empire CL18-20-20 D4-3600 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

14.4 17.7
写入速度，GB/s

9.8 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2600 3772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Kingston KHX1600C9D3/8G 8GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Kingston X0N6VG-HYD2 16GB

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G Skill Intl F4-3200C22-32GRS 32GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston KYXC0V-MID 16GB

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Kingston 9905316-106.A02LF 1GB

Kllisre M378A5143EB2-CRC 4GB

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Golden Empire CL15-17-17 D4-3000 8GB