Kingston KHX1866C10D3/8GX 8GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

差异规格评论

差异

Kingston KHX1866C10D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 51

左右 24% 更低的延时

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 14.4

测试中的平均数值
更快的写入速度，GB/s

11.8 9.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/8GX 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 51
读取速度，GB/s

14.4 15.6
写入速度，GB/s

9.8 11.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2600 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Kingston 9905403-092.A00LF 2GB

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Kingston 9905403-170.A00LF 2GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston 9965604-016.C01G 8GB

Kingston 9965604-016.C01G 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMW64GX4M8A2666C16 8GB

Corsair CMW64GX4M8A2666C16 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB