Kingston KHX1866C10D3/8GX 8GB vs PUSKILL PJ8TFK1GM8 8GB

总分

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

差异规格评论

差异

Kingston KHX1866C10D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.1

测试中的平均数值

PUSKILL PJ8TFK1GM8 8GB

需要考虑的原因
PUSKILL PJ8TFK1GM8 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的写入速度，GB/s

12.9 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/8GX 8GB

PUSKILL PJ8TFK1GM8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

14.4 13.1
写入速度，GB/s

9.8 12.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2600 2608

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CTD 4GB

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Samsung M393B1G70QH0-YK0 8GB

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Kingston CBD26D4S9S8ME-8 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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A-DATA Technology DDR4 2666 2OZ 4GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMK8GX4M2B3200C16 4GB

Corsair CMK8GX4M2B3200C16 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston XRMWRN-MIE 16GB

Kingston XRMWRN-MIE 16GB