Kingston KHX1866C10D3/8GX 8GB vs PUSKILL PJ8TFK1GM8 8GB

总分

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

差异规格评论

差异

Kingston KHX1866C10D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.1

测试中的平均数值

PUSKILL PJ8TFK1GM8 8GB

需要考虑的原因
PUSKILL PJ8TFK1GM8 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的写入速度，GB/s

12.9 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/8GX 8GB

PUSKILL PJ8TFK1GM8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

14.4 13.1
写入速度，GB/s

9.8 12.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2600 2608

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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ASint Technology SSA302G08-EGN1C 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology CT16G4SFRA266.M8FB 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMA82GU6DJR8N-WM 16GB

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Corsair CML8GX3M2A1600C9 4GB

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Apacer Technology 78.C1GMS.C7Z0C 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-3733C17-4GVK 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB