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Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-2800C16-4GVR 4GB

Kingston KHX1866C9D3/8GX 8GB vs G Skill Intl F4-2800C16-4GVR 4GB

总分
star star star star star
Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

总分
star star star star star
G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB

差异 规格 评论

差异

Kingston KHX1866C9D3/8GX 8GB 需要考虑的原因
Kingston KHX1866C9D3/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 67
    左右 46% 更低的延时
  • 更快的写入速度，GB/s
    10.4 left arrow 8.3
    测试中的平均数值
G Skill Intl F4-2800C16-4GVR 4GB 需要考虑的原因
G Skill Intl F4-2800C16-4GVR 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 15.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-2800C16-4GVR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 67
  • 读取速度，GB/s
    15.8 left arrow 15.9
  • 写入速度，GB/s
    10.4 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2751 left arrow 1850

Kingston KHX1866C9D3/8GX 8GB RAM的比较

Kingston KHX1866C10D3/8G 8GB
Apacer Technology 78.C2GFL.C720B 8GB

G Skill Intl F4-2800C16-4GVR 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378B5773DH0-CH9 2GB
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Samsung M378B5673EH1-CF8 2GB
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Kingston KHX3333C17D4/4GX 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK32GX4M2K4133C19 16GB
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内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Corsair CM4B8G2J2400A14K 8GB
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内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
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Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
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A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
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Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
内存RAM