Kingston KHX2133C11D3/4GX 4GB vs G Skill Intl F4-3466C16-8GTZ 8GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

G Skill Intl F4-3466C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 37

左右 -85% 更低的延时
更快的读取速度，GB/s

19.2 15.5

测试中的平均数值
更快的写入速度，GB/s

15.3 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3466C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 20
读取速度，GB/s

15.5 19.2
写入速度，GB/s

10.1 15.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2595 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA451U7AFR8N-TF 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Apacer Technology 78.C2GFA.AF30B 8GB

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Teikon TMA851U6CJR6N-VKSC 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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SK Hynix HMT31GR7CFR4A-PB 8GB

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Corsair CMK32GX4M2K3600C16 16GB

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Crucial Technology BLS4G4D240FSA.8FARG 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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InnoDisk Corporation M4S0-8GSSOCRG 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-2133C15-8GVR 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 9905403-515.A00LF 8GB

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Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB