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Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB

Kingston KHX2133C11D3/4GX 4GB vs G Skill Intl F4-3733C17-8GTZKW 8GB

总分
star star star star star
Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分
star star star star star
G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB

差异 规格 评论

差异

Kingston KHX2133C11D3/4GX 4GB 需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB
报告一个错误
G Skill Intl F4-3733C17-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3733C17-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 37
    左右 -95% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 19
  • 读取速度，GB/s
    15.5 left arrow 19.3
  • 写入速度，GB/s
    10.1 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2595 left arrow 3310

Kingston KHX2133C11D3/4GX 4GB RAM的比较

Golden Empire CL11-12-12 D3-2400 4GB
Corsair CMSX32GX4M2A2666C18 16GB

G Skill Intl F4-3733C17-8GTZKW 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
Samsung M378B5273CH0-CK0 4GB
Samsung M378B5273CH0-CK0 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Samsung M386A4G40DM0-CPB 32GB
Samsung M386A4G40DM0-CPB 32GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KF3200C18D4/8G 8GB
Kingston KF3200C18D4/8G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX2133C15S4/8G 8GB
Kingston KHX2133C15S4/8G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMD32GX4M4B3333C16 8GB
Corsair CMD32GX4M4B3333C16 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM