Crucial Technology CT51264BA160B.C16F 4GB vs Samsung M378B5273CH0-CK0 4GB

总分

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

总分

Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

差异规格评论

差异

Crucial Technology CT51264BA160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

14.3 13.1

测试中的平均数值
更快的写入速度，GB/s

9.4 8.7

测试中的平均数值

Samsung M378B5273CH0-CK0 4GB

需要考虑的原因
Samsung M378B5273CH0-CK0 4GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology CT51264BA160B.C16F 4GB

Samsung M378B5273CH0-CK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 41
读取速度，GB/s

14.3 13.1
写入速度，GB/s

9.4 8.7
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2142 2094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C16-8GTZR 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-2933C14-8GFX 8GB

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Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

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AMD R5S38G1601U2S 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston KHX2400C15S4/8G 8GB

Kingston KHX2400C15S4/8G 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

AMD R7S48G2400U2S 8GB

AMD R7S48G2400U2S 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Corsair CMK64GX4M8X4000C19 8GB

Corsair CMK64GX4M8X4000C19 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240