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Crucial Technology BLE4G3D1608DE1TX0. 4GB
Golden Empire CL16-18-18 D4-3200 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Golden Empire CL16-18-18 D4-3200 8GB

总分
star star star star star
Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分
star star star star star
Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
Golden Empire CL16-18-18 D4-3200 8GB 需要考虑的原因
Golden Empire CL16-18-18 D4-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 34
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Golden Empire CL16-18-18 D4-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 28
  • 读取速度，GB/s
    16.2 left arrow 18.2
  • 写入速度，GB/s
    9.7 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2636 left arrow 3463

Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较

Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB

Golden Empire CL16-18-18 D4-3200 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
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内存RAM
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SK Hynix HMT325S6CFR8C-H9 2GB
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Corsair CM4X8GE2666C16K8 8GB
内存RAM
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Samsung M4 70T2864QZ3-CF7 1GB
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内存RAM
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内存RAM
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Team Group Inc. UD5-6400 16GB
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