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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Mushkin 99[2/7/4]191[F/T] 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Mushkin 99[2/7/4]191[F/T] 4GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Mushkin 99[2/7/4]191[F/T] 4GB 需要考虑的原因
Mushkin 99[2/7/4]191[F/T] 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 -96% 更低的延时

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Mushkin 99[2/7/4]191[F/T] 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 26
  • 读取速度，GB/s
    15.6 left arrow 14.5
  • 写入速度，GB/s
    11.8 left arrow 10.1
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 2480

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Mushkin 99[2/7/4]191[F/T] 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Mushkin 99[2/7/4]191[F/T] 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
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TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Transcend Information TS2GSH64V1B 16GB
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Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
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Kingston KVR800D2N6/2G 2GB
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Samsung M393B1G70BH0-YK0 8GB
Corsair CMK128GX4M8X3600C18 16GB
Corsair CMK128GX4M8X3600C18 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BL8G30C15U4R.8FE 8GB
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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Crucial Technology BLS4G4D240FSC.8FBD2 4GB
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SK Hynix HMT325S6CFR8C-H9 2GB
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Samsung M4 70T2864QZ3-CF7 1GB
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Crucial Technology BLS4G4D240FSC.8FBR2 4GB
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Team Group Inc. Vulcan-1600 4GB
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Kingston X5H5PW-MIE 8GB
内存RAM
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Samsung M393B5270CH0-CH9 4GB
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Team Group Inc. UD5-6400 16GB
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Samsung M3 93T5750CZA-CE6 2GB
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