Kingston KHX2133C11D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston KHX2133C11D3/4GX 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 37
    左右 -54% 更低的延时
  • 更快的读取速度,GB/s
    16 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.5 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston KHX2133C11D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    37 left arrow 24
  • 读取速度,GB/s
    15.5 left arrow 16.0
  • 写入速度,GB/s
    10.1 left arrow 12.5
  • 内存带宽,mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2595 left arrow 2925
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较