Kingston KHX2400C11D3/4GX 4GB vs Corsair CMW16GX4M2Z3200C16 8GB

总分

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

总分

Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

差异规格评论

差异

Kingston KHX2400C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2400C11D3/4GX 4GB

报告一个错误

Corsair CMW16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMW16GX4M2Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 35

左右 -13% 更低的延时
更快的读取速度，GB/s

18.4 16.2

测试中的平均数值
更快的写入速度，GB/s

14.2 10.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX2400C11D3/4GX 4GB

Corsair CMW16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 31
读取速度，GB/s

16.2 18.4
写入速度，GB/s

10.7 14.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2726 3500

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M378B5273CH0-CH9 4GB

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Corsair CMK128GX4M8B3000C16 16GB

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Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

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Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

G Skill Intl F4-2400C17-8GIS 8GB

G Skill Intl F4-2400C17-8GIS 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston 9905622-055.A00G 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB