Kingston KHX2400C11D3/8GX 8GB vs Teikon TMA851S6CJR6N-VKSC 4GB

总分

Kingston KHX2400C11D3/8GX 8GB

Kingston KHX2400C11D3/8GX 8GB

总分

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

差异规格评论

差异

Kingston KHX2400C11D3/8GX 8GB

需要考虑的原因
Kingston KHX2400C11D3/8GX 8GB

报告一个错误

Teikon TMA851S6CJR6N-VKSC 4GB

需要考虑的原因
Teikon TMA851S6CJR6N-VKSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 -33% 更低的延时
更快的读取速度，GB/s

17 15.9

测试中的平均数值
更快的写入速度，GB/s

12.2 10.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX2400C11D3/8GX 8GB

Teikon TMA851S6CJR6N-VKSC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 27
读取速度，GB/s

15.9 17.0
写入速度，GB/s

10.7 12.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2815 2379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663CZ3-CE6 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

Corsair CMD32GX4M2B3000C15 16GB

Corsair CMD32GX4M2B3000C15 16GB