Kingston KHX2800C14D4/8GX 8GB vs Corsair CMT64GX4M4C3466C16 16GB

总分

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

总分

Corsair CMT64GX4M4C3466C16 16GB

Corsair CMT64GX4M4C3466C16 16GB

差异规格评论

差异

Kingston KHX2800C14D4/8GX 8GB

需要考虑的原因
Kingston KHX2800C14D4/8GX 8GB

报告一个错误

Corsair CMT64GX4M4C3466C16 16GB

需要考虑的原因
Corsair CMT64GX4M4C3466C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 32

左右 -28% 更低的延时
更快的读取速度，GB/s

20.2 16.2

测试中的平均数值
更快的写入速度，GB/s

17.2 12.5

测试中的平均数值

规格

完整的技术规格清单

Kingston KHX2800C14D4/8GX 8GB

Corsair CMT64GX4M4C3466C16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

32 25
读取速度，GB/s

16.2 20.2
写入速度，GB/s

12.5 17.2
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3084 4106

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Samsung M393A1G40DB0-B`B 8GB

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Nanya Technology M2F4GH64CB8HB6N-DI 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

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Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMD32GX4M4A2800C16 8GB

Corsair CMD32GX4M4A2800C16 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB