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Samsung M393A1G40DB0-B`B 8GB
Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Samsung M393A1G40DB0-B`B 8GB vs Nanya Technology M2F4GH64CB8HB6N-DI 4GB

总分
star star star star star
Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Nanya Technology M2F4GH64CB8HB6N-DI 4GB

差异 规格 评论

差异

Samsung M393A1G40DB0-B`B 8GB 需要考虑的原因
Samsung M393A1G40DB0-B`B 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33% 更高的带宽
Nanya Technology M2F4GH64CB8HB6N-DI 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 33
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 5.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393A1G40DB0-B`B 8GB
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    33 left arrow 25
  • 读取速度，GB/s
    10.4 left arrow 15.2
  • 写入速度，GB/s
    5.5 left arrow 9.4
  • 内存带宽，mbps
    17000 left arrow 12800
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1806 left arrow 2415

Samsung M393A1G40DB0-B`B 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Nanya Technology M2F4GH64CB8HB6N-DI 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AM2L16BC4R1-B0WS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-4400C18-8GTRS 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM4X8GD3200C16K4 8GB
Corsair CM4X8GD3200C16K4 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CMSX16GX4M2A3000C16 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
内存RAM
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Kingston 9905678-005.A00G 8GB
Kingston 9905678-005.A00G 8GB
内存RAM
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Kingston 9965525-010.A00LF 4GB
Kingston 9965525-010.A00LF 4GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Apacer Technology 78.B1GN3.4032B 4GB
内存RAM