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Kingston KHX2800C14D4/8GX 8GB
Samsung M471A1G44AB0-CWE 8GB

Kingston KHX2800C14D4/8GX 8GB vs Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异 规格 评论

差异

Kingston KHX2800C14D4/8GX 8GB 需要考虑的原因
Kingston KHX2800C14D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 50
    左右 36% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 10.9
    测试中的平均数值
Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Kingston KHX2800C14D4/8GX 8GB
Samsung M471A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    32 left arrow 50
  • 读取速度，GB/s
    16.2 left arrow 15.3
  • 写入速度，GB/s
    12.5 left arrow 10.9
  • 内存带宽，mbps
    17000 left arrow 25600
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3084 left arrow 2512

Kingston KHX2800C14D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Corsair CMK32GX4M4C3000C15 8GB
Corsair CMK32GX4M4C3000C15 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMK128GX4M8A2666C16 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393A4K40BB0-CPB 32GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43DB1-CVF 16GB
内存RAM