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takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A4K40BB0-CPB 32GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Samsung M393A4K40BB0-CPB 32GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Samsung M393A4K40BB0-CPB 32GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
低于PassMark测试中的延时,ns
46
56
左右 18% 更低的延时
需要考虑的原因
Samsung M393A4K40BB0-CPB 32GB
报告一个错误
更快的读取速度,GB/s
9.5
5
测试中的平均数值
更快的写入速度,GB/s
7.9
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A4K40BB0-CPB 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
56
读取速度,GB/s
5,535.6
9.5
写入速度,GB/s
1,852.4
7.9
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
2294
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Samsung M393A4K40BB0-CPB 32GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905678-138.A00G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A4K40BB0-CPB 32GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMD128GX4M8B2800C14 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Samsung M471B5773DH0-CH9 2GB
Samsung M393A1G40EB1-CRC 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CM4X4GD3000C16K2 4GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMA82GR7AFR4N-TF 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Mushkin MR[A/B]4U320LLLM16G 16GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston CBD24D4S7S8MB-8 8GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMK16GX4M2C3200C16 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Samsung M378T5663QZ3-CF7 2GB
Samsung M471A5143EB1-CRC 4GB
Samsung M393B1G70BH0-CK0 8GB
Asgard VMA45UH-MEC1U2AW2 16GB
报告一个错误
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Bug description
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