Kingston KHX318C10FR/8G 8GB vs Corsair CMK64GX4M4B3200C16 16GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

Corsair CMK64GX4M4B3200C16 16GB

Corsair CMK64GX4M4B3200C16 16GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

Corsair CMK64GX4M4B3200C16 16GB

需要考虑的原因
Corsair CMK64GX4M4B3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 60

左右 -94% 更低的延时
更快的读取速度，GB/s

17.8 6.8

测试中的平均数值
更快的写入速度，GB/s

14.3 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

Corsair CMK64GX4M4B3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 31
读取速度，GB/s

6.8 17.8
写入速度，GB/s

5.4 14.3
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 3615

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

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Samsung M378B5773DH0-CH9 2GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

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Patriot Memory (PDP Systems) PSD416G24002 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston 99U5624-003.A00G 8GB

Kingston 99U5624-003.A00G 8GB

Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB