Kingston KHX318C10FR/8G 8GB vs G Skill Intl F4-2133C15-4GIS 4GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F4-2133C15-4GIS 4GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

G Skill Intl F4-2133C15-4GIS 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 60

左右 -82% 更低的延时
更快的读取速度，GB/s

15.6 6.8

测试中的平均数值
更快的写入速度，GB/s

11.5 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-2133C15-4GIS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 33
读取速度，GB/s

6.8 15.6
写入速度，GB/s

5.4 11.5
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 2562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43DB1-CTD 8GB

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G Skill Intl F4-2133C15-4GIS 4GB

PNY Electronics PNY 2GB

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G Skill Intl F4-3000C15-8GRK 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMW64GX4M2E3200C16 32GB

Corsair CMW64GX4M2E3200C16 32GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB