Kingston KHX318C10FR/8G 8GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

G Skill Intl F4-3600C17-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 60

左右 -253% 更低的延时
更快的读取速度，GB/s

21.6 6.8

测试中的平均数值
更快的写入速度，GB/s

17.7 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 17
读取速度，GB/s

6.8 21.6
写入速度，GB/s

5.4 17.7
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 3702

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905703-011.A00G 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Apacer Technology D12.2356WS.001 8GB

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SK Hynix HMA82GU7AFR8N-UH 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Samsung M471A2K43DB1-CWE 16GB

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G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB