Kingston KHX318C10FR/8G 8GB vs G Skill Intl F4-4000C16-8GTZR 8GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

G Skill Intl F4-4000C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 60

左右 -131% 更低的延时
更快的读取速度，GB/s

18.2 6.8

测试中的平均数值
更快的写入速度，GB/s

17.2 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 26
读取速度，GB/s

6.8 18.2
写入速度，GB/s

5.4 17.2
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 3885

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology CT8G4DFS832A.C8FE 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3000C15-8GVRB 8GB

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Kingston KVR16N11/8-SP 8GB

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Kingston 9905701-131.A00G 16GB

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Kingston KHX1600C9D3/8G 8GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB