Kingston KHX318C10FR/8G 8GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

Micron Technology 4ATF1G64HZ-3G2B2 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 60

左右 -54% 更低的延时
更快的读取速度，GB/s

16.1 6.8

测试中的平均数值
更快的写入速度，GB/s

11.9 5.4

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 39
读取速度，GB/s

6.8 16.1
写入速度，GB/s

5.4 11.9
内存带宽，mbps

14900 25600

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1411 2782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Corsair CMD32GX4M4B2800C14 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston XWM8G1-MIE 32GB

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Samsung M3 93T5750CZA-CE6 2GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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AMD R534G1601U1S-UO 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

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Micron Technology 8ATF1G64AZ-2G6B1 8GB

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Kingston 9905743-023.A00G 8GB

Kingston 9905743-023.A00G 8GB

Crucial Technology CT25664AA800.M16FM 2GB

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Corsair CMK16GX4M1C3000C16 16GB