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Kingston KHX3200C18D4/8G 8GB
Crucial Technology CB16GU2666.C8ET 16GB

Kingston KHX3200C18D4/8G 8GB vs Crucial Technology CB16GU2666.C8ET 16GB

总分
star star star star star
Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分
star star star star star
Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

差异 规格 评论

差异

Kingston KHX3200C18D4/8G 8GB 需要考虑的原因
Kingston KHX3200C18D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 37
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Crucial Technology CB16GU2666.C8ET 16GB 需要考虑的原因
Crucial Technology CB16GU2666.C8ET 16GB
报告一个错误

规格

完整的技术规格清单
Kingston KHX3200C18D4/8G 8GB
Crucial Technology CB16GU2666.C8ET 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 37
  • 读取速度，GB/s
    18.2 left arrow 13.6
  • 写入速度，GB/s
    14.9 left arrow 9.2
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3501 left arrow 2722

Kingston KHX3200C18D4/8G 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Kingston 9965525-140.A00LF 8GB

Crucial Technology CB16GU2666.C8ET 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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内存RAM
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内存RAM
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Samsung M378B5673EH1-CF8 2GB
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Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
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Corsair CMT64GX4M4C3200C16 16GB
内存RAM