Kingston KHX3200C18D4/8G 8GB vs G Skill Intl F4-4000C19-4GTZ 4GB

总分

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分

G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

差异规格评论

差异

Kingston KHX3200C18D4/8G 8GB

需要考虑的原因
Kingston KHX3200C18D4/8G 8GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-4000C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4000C19-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 28

左右 -40% 更低的延时
更快的读取速度，GB/s

19.4 18.2

测试中的平均数值
更快的写入速度，GB/s

15.0 14.9

测试中的平均数值

规格

完整的技术规格清单

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-4000C19-4GTZ 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

28 20
读取速度，GB/s

18.2 19.4
写入速度，GB/s

14.9 15.0
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3501 3217

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston KKN2NM-MIE 4GB

Kingston KKN2NM-MIE 4GB

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMU16GX4M2A2400C16 8GB

Corsair CMU16GX4M2A2400C16 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

G Skill Intl F3-1600C9-4GAO 4GB

G Skill Intl F3-1600C9-4GAO 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB