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Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Kingston KHX3200C18D4/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

总分
star star star star star
Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

差异 规格 评论

差异

Kingston KHX3200C18D4/8G 8GB 需要考虑的原因
Kingston KHX3200C18D4/8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 11.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 -4% 更低的延时

规格

完整的技术规格清单
Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 27
  • 读取速度，GB/s
    18.2 left arrow 15.3
  • 写入速度，GB/s
    14.9 left arrow 11.2
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3501 left arrow 2545

Kingston KHX3200C18D4/8G 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Kingston 9965525-140.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA81GS6JJR8N-VK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9905643-009.A00G 8GB
Kingston 9905643-009.A00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD8GX4M2B3466C18 4GB
Corsair CMD8GX4M2B3466C18 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CM4X16GD3200C16K2E 16GB
Corsair CM4X16GD3200C16K2E 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
AMD R7416G2133U2S 16GB
AMD R7416G2133U2S 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905734-059.A00G 16GB
Kingston 9905734-059.A00G 16GB
内存RAM