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Kingston KP4T2F-PSB 4GB
G Skill Intl F4-2666C19-8GNT 8GB

Kingston KP4T2F-PSB 4GB vs G Skill Intl F4-2666C19-8GNT 8GB

总分
star star star star star
Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

总分
star star star star star
G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

差异 规格 评论

差异

Kingston KP4T2F-PSB 4GB 需要考虑的原因
Kingston KP4T2F-PSB 4GB
报告一个错误
G Skill Intl F4-2666C19-8GNT 8GB 需要考虑的原因
G Skill Intl F4-2666C19-8GNT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 38
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-2666C19-8GNT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 31
  • 读取速度，GB/s
    13.9 left arrow 16.7
  • 写入速度，GB/s
    9.3 left arrow 13.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2317 left arrow 3199

Kingston KP4T2F-PSB 4GB RAM的比较

Kingston KP4T2F-MIN 4GB
Samsung M471B5773CHS-CF8 2GB

G Skill Intl F4-2666C19-8GNT 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905700-024.A00G 8GB
Kingston 9905700-024.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston 9965640-015.A00G 32GB
Kingston 9965640-015.A00G 32GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD16GX4M4B3600C18 4GB
Corsair CMD16GX4M4B3600C18 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM
Corsair CMW32GX4M2E3200C16 16GB
Corsair CMW32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
MemxPro Inc. D4S8GHIOFFC 8GB
MemxPro Inc. D4S8GHIOFFC 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMWX16GC3600C18W2D 16GB
Corsair CMWX16GC3600C18W2D 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Corsair CMK16GX4M4B3000C15 4GB
Corsair CMK16GX4M4B3000C15 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK64GX4M4X4000C18 16GB
Corsair CMK64GX4M4X4000C18 16GB
内存RAM