Kingston KTC1G-UDIMM 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,410.6 13.5

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 61

左右 -135% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 26
读取速度，GB/s

4,230.0 16.8
写入速度，GB/s

2,410.6 13.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

754 2880

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

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Kingston 9905700-012.A00G 8GB

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Kingston 9905403-444.A00LF 4GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

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Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology CT8G4SFS8266.C8FD1 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston KHX2133C14S4/16G 16GB