Kingston KTC1G-UDIMM 1GB vs Micron Technology AFLD48VH1P 8GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值
更快的写入速度，GB/s

2,410.6 11.4

测试中的平均数值

Micron Technology AFLD48VH1P 8GB

需要考虑的原因
Micron Technology AFLD48VH1P 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 61

左右 -154% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

Micron Technology AFLD48VH1P 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 24
读取速度，GB/s

4,230.0 15.7
写入速度，GB/s

2,410.6 11.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

754 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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UMAX Technology 16GB

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Corsair VS1GB800D2 1GB

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Samsung M471A2K43CB1-CRCR 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology D12.2324WT.001 8GB

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Kingston 9905403-011.A03LF 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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