Kingston KTC1G-UDIMM 1GB vs Samsung M47472K43DB1-CTD 16GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

Samsung M47472K43DB1-CTD 16GB

需要考虑的原因
Samsung M47472K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 61

左右 -165% 更低的延时
更快的写入速度，GB/s

8.0 2,410.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

Samsung M47472K43DB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 23
读取速度，GB/s

4,230.0 15.5
写入速度，GB/s

2,410.6 8.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

754 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Dust Leopard DDR4-2400 C17 8GB 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

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Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

Corsair CMK64GX4M2E3200C16 32GB

Corsair CMK64GX4M2E3200C16 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston 9905625-066.A00G 16GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB