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Kingston KVR16N11/8-SP 8GB
Avexir Technologies Corporation T-20181206 8GB

Kingston KVR16N11/8-SP 8GB vs Avexir Technologies Corporation T-20181206 8GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 70
    左右 63% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 8.8
    测试中的平均数值
Avexir Technologies Corporation T-20181206 8GB 需要考虑的原因
Avexir Technologies Corporation T-20181206 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Avexir Technologies Corporation T-20181206 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 70
  • 读取速度，GB/s
    13.9 left arrow 15.3
  • 写入速度，GB/s
    9.5 left arrow 8.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 1971

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Avexir Technologies Corporation T-20181206 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
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内存RAM
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内存RAM
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内存RAM
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