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Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB

Kingston KVR16N11/8-SP 8GB vs G Skill Intl F4-4266C19-8GTZSW 8GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
G Skill Intl F4-4266C19-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 26
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    22.1 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 17
  • 读取速度，GB/s
    13.9 left arrow 22.1
  • 写入速度，GB/s
    9.5 left arrow 18.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 3847

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

G Skill Intl F4-4266C19-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Corsair CMW16GX4M2K3600C16 8GB
Corsair CMW16GX4M2K3600C16 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMV32GX4M1A2666C18 32GB
Corsair CMV32GX4M1A2666C18 32GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Avant Technology J642GU42J7240NF 16GB
Avant Technology J642GU42J7240NF 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM