Kingston KVR16N11/8-SP 8GB vs G Skill Intl F4-4600C18-8GTZR 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

G Skill Intl F4-4600C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4600C18-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

19.3 13.9

测试中的平均数值
更快的写入速度，GB/s

17.3 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

13.9 19.3
写入速度，GB/s

9.5 17.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 3653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G30C15U4BL.M8FE1 8GB

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Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-4600C18-8GTZR 8GB

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Kingston 9905701-003.A00G 16GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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Hypertec G2RT-4AFT00 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 36ASF4G72PZ-2G3B1 32GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Teikon TMA851U6CJR6N-VKSC 4GB

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Samsung M471B5273CH0-CH9 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK8GX4M1A2400C16 8GB

Corsair CMK8GX4M1A2400C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Corsair CMWX8GF2666C16W4 8GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB