Kingston KVR16N11/8-SP 8GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 26

左右 -30% 更低的延时
更快的读取速度，GB/s

19.7 13.9

测试中的平均数值
更快的写入速度，GB/s

15.2 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 20
读取速度，GB/s

13.9 19.7
写入速度，GB/s

9.5 15.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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G Skill Intl F4-3200C14-16GFX 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Essencore Limited IMA41GU6MFR8N-CF0 8GB