Kingston KVR16N11/8-SP 8GB vs Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

需要考虑的原因
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

报告一个错误

更快的读取速度，GB/s

15.4 13.9

测试中的平均数值
更快的写入速度，GB/s

12.4 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

13.9 15.4
写入速度，GB/s

9.5 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2432 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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Crucial Technology RM51264BA1339.16FR 4GB

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Samsung M378A2K43DB1-CTD 16GB

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Panram International Corporation PUD42133C154G2VS 4GB

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Kingston 9905624-023.A00G 8GB

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Samsung M471B5773DH0-CH9 2GB

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMWX16GC3200C16W2E 16GB

Corsair CMWX16GC3200C16W2E 16GB