Kingston KVR16N11/8-SP 8GB vs Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

报告一个错误

更快的读取速度，GB/s

17.3 13.9

测试中的平均数值
更快的写入速度，GB/s

14.3 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

13.9 17.3
写入速度，GB/s

9.5 14.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2432 3208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M4A2133C15 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 9905703-008.A00G 16GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-3200C14-16GTRG 16GB

G Skill Intl F4-3200C14-16GTRG 16GB

Samsung M471B1G73QH0-YK0 8GB

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Kingston 9905711-015.A00G 4GB

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Samsung M391B5673FH0-CH9 2GB

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Samsung M378A2K43BB1-CRC 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB