RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
比较
Kingston KVR16N11/8-SP 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
总分
Kingston KVR16N11/8-SP 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
40
左右 35% 更低的延时
更快的读取速度,GB/s
13.9
9.1
测试中的平均数值
更快的写入速度,GB/s
9.5
6.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
40
读取速度,GB/s
13.9
9.1
写入速度,GB/s
9.5
6.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2432
2031
Kingston KVR16N11/8-SP 8GB RAM的比较
Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston HP26D4S9S1ME-4 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905622-024.A00G 4GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM48GU48N24-FFFHM 8GB
SK Hynix HYMP112S64CP6-S6 1GB
A-DATA Technology HYOVF1B163BZJ 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Kingston 9905403-090.A01LF 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Samsung M378B5273CH0-CH9 4GB
EVGA 8GX-D4-3200-MR 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Corsair CMK16GX4M2E4000C19 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
PNY Electronics PNY 2GB
Corsair CMK8GX4M1D2400C14 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
报告一个错误
×
Bug description
Source link