Kingston KVR16N11/8-SP 8GB vs Inmos + 256MB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时
更快的读取速度，GB/s

13.9 11.5

测试中的平均数值
更快的写入速度，GB/s

9.5 9.1

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

更高的内存带宽，mbps

16800 12800

左右 1.31 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Inmos + 256MB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

13.9 11.5
写入速度，GB/s

9.5 9.1
内存带宽，mbps

12800 16800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

2432 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Samsung M393B5170FH0-CH9 4GB

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Corsair CMK16GX4M2D2400C14 8GB

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Kingston 99U5584-017.A00LF 4GB

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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMK32GX4M2A2400C14 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

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Samsung M378A2K43CB1-CTD 16GB

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G Skill Intl F4-3600C17-4GTZ 4GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung V-GeN D4S8GL24A8 8GB

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Kingston 9905625-074.A00G 16GB