Kingston KVR16N11/8-SP 8GB vs Micron Technology 36ASF4G72PZ-2G3A1 32GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时
更快的读取速度，GB/s

13.9 9.3

测试中的平均数值
更快的写入速度，GB/s

9.5 7.5

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3A1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3A1 32GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

13.9 9.3
写入速度，GB/s

9.5 7.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2432 2081

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF51264AZ-2G1A2 4GB

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Samsung M378B5673EH1-CF8 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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SK Hynix HMA82GS6DJR8N-XN 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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G Skill Intl F4-4133C19-8GTZKWC 8GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology BL8G32C16U4WL.8FE 8GB

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Kingston 9905403-447.A00LF 4GB

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Crucial Technology CT8G4SFRA32A.M8FRS 8GB

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Kingston 9905625-062.A00G 8GB

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