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Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB

Kingston KVR16N11/8-SP 8GB vs Micron Technology 8ATF1G64AZ-2G1B1 8GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 32
    左右 19% 更低的延时
Micron Technology 8ATF1G64AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1B1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 32
  • 读取速度，GB/s
    13.9 left arrow 15.5
  • 写入速度，GB/s
    9.5 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2960

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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内存RAM
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